bc327-xbk / BC328-XBK bc327-xbk / BC328-XBK pnp general purpose si-epitaxial planar transistors si-epitaxial planar-transistoren fr universellen einsatz pnp version 2010-06-23 dimensions - ma?e [mm] power dissipation verlustleistung 625 mw plastic case kunststoffgeh?use to-92 (10d3) weight approx. C gewicht ca. 0.18 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert special packaging bulk sonder-lieferform schttgut maximum ratings (t a = 25c) grenzwerte (t a = 25c) bc327 bc328 collector-emitter-volt. C kollektor-emitter-spannung e-b short - v ces 50 v 30 v collector-emitter-volt. C kollektor-emitter-spannung b open - v ceo 45 v 25 v emitter-base-voltage C emitter-basis-spannung c open - v ebo 5 v power dissipation C verlustleistung p tot 625 mw 1 ) collector current C kollektorstrom (dc) - i c 800 ma peak collector current C kollektor-spitzenstrom - i cm 1 a base current C basisstrom - i b 100 ma junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -55...+150c -55+150c characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. dc current gain C kollektor-basis-stromverh?ltnis 2 ) - v ce = 1 v, - i c = 100 ma group -16 group -25 group -40 h fe h fe h fe 100 160 250 160 250 400 250 400 630 - v ce = 1 v, - i c = 300 ma group -16 group -25 group -40 h fe h fe h fe 60 100 170 130 200 320 C C C collector-emitter saturation voltage C kollektor-emitter-s?ttigungsspg. 2 ) - i c = 500 ma, - i b = 50 ma - v cesat C C 0.7 v 1 valid, if leads are kept at ambient temperature at a distance of 2 mm from case gltig wenn die anschlussdr?hte in 2 mm abstand vom geh?use auf umgebungstemperatur gehalten werden 2 tested with pulses t p = 300 s, duty cycle 2% C gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% ? diotec semiconductor ag http://www.diotec.com/ 1 2 x 1.27 c b e 4.6 0.1 4 . 6 0 . 1 m i n 1 2 . 5
bc327-xbk / BC328-XBK characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. base-emitter-voltage C basis-emitter-spannung 2 ) - v ce = 1 v, - i c = 300 ma, - v be C C 1.2 v collector-emitter cutoff current C kollektor-emitter-reststrom - v ce = 45 v, (b-e short) - v ce = 25 v, (b-e short) bc327 bc328 - i ces - i ces C C 2 na 2 na 100 na 100 na - v ce = 45 v, t j = 125c, (b-e short) - v ce = 25 v, t j = 125c, (b-e short) bc327 bc328 - i ces - i ces C C C C 10 a 10 a gain-bandwidth product C transitfrequenz - v ce = 5 v, - i c = 10 ma, f = 50 mhz f t C 100 mhz C collector-base capacitance C kollektor-basis-kapazit?t - v cb = 10 v, i e =i e = 0, f = 1 mhz c cbo C 12 pf C thermal resistance junction to ambient air w?rmewiderstand sperrschicht C umgebende luft r tha < 200 k/w 1 ) recommended complementary npn transistors empfohlene komplement?re npn-transistoren bc337 / bc338 available current gain groups per type lieferbare stromverst?rkungsgruppen pro typ bc327-16 bc327-25 bc327-40 bc328-16 bc328-25 bc328-40 2 tested with pulses t p = 300 s, duty cycle 2% C gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% 1 valid, if leads are kept at ambient temperature at a distance of 2 mm from case gltig wenn die anschlussdr?hte in 2 mm abstand vom geh?use auf umgebungstemperatur gehalten werden 2 http://www.diotec.com/ ? diotec semiconductor ag [%] p tot 120 100 80 60 40 20 0 [c] t a 150 100 50 0 power dissipation versus ambient temperature ) verlustleistung in abh. von d. umgebungstemp. ) 1 1
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